Part Number Hot Search : 
93MHZ MAX440 180CA SXXBP 32156SF4 CPC7556 VPI25100 100N1
Product Description
Full Text Search
 

To Download SMN04L20IS Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  rev. date: 01-oct-13 ksd-t6q017-001 www .auk.co.kr 1 of 8 SMN04L20IS logic level n-ch power mosfet 200v logic n-channel mosfet features ? drain-source breakdown voltage: bv dss =200v (min.) ? low gate charge: q g =4nc (typ.) ? low drain-source on-resistance: r ds(on) =1.35 ? (max.) ? 100% avalanche tested ? rohs compliant device ordering information part number marking package SMN04L20IS smn04l20 i-pak (short lead) marking information absolute maximum ratings (t c =25 ? c unless otherwise noted) characteristic symbol rating unit drain-source voltage v dss 200 v gate-source voltage v gss ? 20 v drain current (dc) * i d t c =25 ? c 3.2 a t c =100 ? c 2.02 a drain current (pulsed) * i dm 12.8 a avalanche current (note 2) i as 2.5 a single pulsed avalanche energy (note 2) e as 52 mj repetitive avalanche current (note 1) i ar 2.5 a repetitive avalanche energy (note 1) e ar 3.3 mj power dissipation p d 33 w junction temperature t j 150 ? c storage temperature range t stg -55~150 ? c * limited only maximum junction temperature i-pak smn 04l20 yww column 1, 2: device code column 3: production information e.g.) yww -. y: year code -. ww: week code g d s
rev. date: 01-oct-13 ksd-t6q017-001 www .auk.co.kr 2 of 8 thermal characteristics characteristic symbol rating unit thermal resistance, junction to case r th(j-c) max. 3.78 ? c/w thermal resistance, junction to ambient r th(j-a) max. 50 electrical characteristics (t c =25 ? c unless otherwise noted) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss i d =250ua, v gs =0 200 - - v gate threshold voltage v gs(th) i d =250ua, v ds =v gs 1 1.75 2.25 v drain-source cut-off current i dss v ds =200v, v gs =0v - - 1 ua gate leakage current i gss v ds =0v, v gs = ? 20v - - ? 100 na drain-source on-resistance r ds(on) v gs =10v, i d =1.6a - 1.1 1.35 ? v gs =5v, i d =1.6a - 1.13 1.4 ? forward transfer conductance (note 3) g fs v ds =10v, i d =1.6a - 3 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 224 302 pf output capacitance c oss - 38 51 reverse transfer capacitance c rss - 6.2 10 turn-on delay time (note 3,4) t d(on) v dd =100v, i d =3.2a r g =25 ? - 23 51 ns rise time (note 3,4) t r - 85 177 turn-off delay time (note 3,4) t d(off) - 80 169 fall time (note 3,4) t f - 32 68 total gate charge (note 3,4) q g v ds =160v, v gs =10v i d =3.2a - 4 5 nc gate-source charge (note 3,4) q gs - 1.4 - gate-drain charge (note 3,4) q gd - 0.6 - source-drain diode ratings and characteristics (t c =25 ? c unless otherwise noted) characteristic symbol test condition min. typ. max. unit source current (dc) i s integral reverse diode in the mosfet - - 3.2 a source current (pulsed) i sm - - 12.8 a forward voltage v sd v gs =0v, i s =3.2a - - 1.5 v reverse recovery time (note 3,4) t rr i s =3.2a, v gs =0v di f /dt=100a/us - 90 - ns reverse recovery charge (note 3,4) q rr - 0.29 - uc note: 1. repeated rating: pulse width limited by safe operating area 2. l=7.6mh, i as =3.2a, v dd =50v, r g =25 ? , starting t j =25 ? c 3. pulse test: pulse width 300us, duty cycle 2% 4. essentially independent of operat ing temperature typical characteristics SMN04L20IS
rev. date: 01-oct-13 ksd-t6q017-001 www .auk.co.kr 3 of 8 typical electrical characteristics curves SMN04L20IS fig. 2 i d ? v gs fig. 1 i d - v ds fig. 4 i s - v sd fig. 3 r ds(on) - i d fig. 5 capacitance - v ds fig. 6 v gs - q g
rev. date: 01-oct-13 ksd-t6q017-001 www .auk.co.kr 4 of 8 fig. 8 r ds(on) ? t j fig. 7 bv dss - t j fig. 9 i d - t c fig. 10 safe operating area SMN04L20IS fig. 11 transient thermal impedance
rev. date: 01-oct-13 ksd-t6q017-001 www .auk.co.kr 5 of 8 SMN04L20IS fig. 12 gate charge test circuit & waveform fig. 13 resistive switching test circuit & waveform fig. 14 e as test circuit & waveform
rev. date: 01-oct-13 ksd-t6q017-001 www .auk.co.kr 6 of 8 SMN04L20IS fig. 15 diode reverse recovery time test circuit & waveform
rev. date: 01-oct-13 ksd-t6q017-001 www .auk.co.kr 7 of 8 package outline dimensions SMN04L20IS
rev. date: 01-oct-13 ksd-t6q017-001 www .auk.co.kr 8 of 8 the auk corp. products are intended for the use as components in general electronic equipment (office and communication eq uipment, measuring equipment, home appliance, etc.). please make sure that you consult with us before you use these auk corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion contro l, all types of safety device, etc.). auk corp. cannot accept liability to any damage which may occur in case these auk corp. products were used in the mentioned equipm ents without prior consultation with auk corp.. specifications mentioned in this publicat ion are subject to change without notice. SMN04L20IS


▲Up To Search▲   

 
Price & Availability of SMN04L20IS

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X